Design of Optimum the LIGBT with second buffer Using Response Surface Method
碩士 === 逢甲大學 === 電子工程學系 === 106 === The paper elaborates the design of a Lateral Insulated Gate Bipolar Transistor (LIGBT) and constructs an experimental table of the response function relationship between the breakdown voltage (VBR) and the on-resistance (RON) of the LIGBT using Design of Experiment...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d4cd6n |