Characteristics of Different Zr Content of Stacked HfZrO Films and Its Application for Negative Capacitor Junctionless Field Effect Transistor (NC-JLFET)
碩士 === 逢甲大學 === 電子工程學系 === 106 === This thesis investigates the characteristics of different Zr contents of stacked Hf1-xZrxO2 (HZO) films and its application for negative capacitor junctionless field effect transistor (NC-JLFET). Metal/Ferroelectric dielectric/Interfacial layer/Silicon (MFIS) capac...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/n54uj6 |