Characteristics of Different Zr Content of Stacked HfZrO Films and Its Application for Negative Capacitor Junctionless Field Effect Transistor (NC-JLFET)

碩士 === 逢甲大學 === 電子工程學系 === 106 === This thesis investigates the characteristics of different Zr contents of stacked Hf1-xZrxO2 (HZO) films and its application for negative capacitor junctionless field effect transistor (NC-JLFET). Metal/Ferroelectric dielectric/Interfacial layer/Silicon (MFIS) capac...

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Bibliographic Details
Main Authors: HONG, WEI-TING, 洪偉庭
Other Authors: LIN, CHENG-LI
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/n54uj6