Investigations on AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors
碩士 === 逢甲大學 === 電子工程學系 === 106 === In this dissertation, we fabricate AlGaN/GaN HEMTs with Al2O3 dielectric layer and focus on their properties. Providing the comparison of the characteristics, in this thesis, schottky-gate planar-HFET and schottky-shift-gate planar-HFET have been achieved, includin...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7t8jjw |