| Summary: | 碩士 === 逢甲大學 === 電子工程學系 === 106 === In this dissertation, we fabricate AlGaN/GaN HEMTs with Al2O3 dielectric layer and focus on their properties. Providing the comparison of the characteristics, in this thesis, schottky-gate planar-HFET and schottky-shift-gate planar-HFET have been achieved, including maximum drain-source saturation current density (IDS, max) of 655 mA/mm, 337 mA/mm, and 472 mA/mm, drain-source current density at VGS = 0 V (IDSS0) of 564mA/mm, 242mA/mm, and 275 mA/mm, maximum extrinsic transconductance (gm, max) of 115 mS/mm, 96 mS/mm, and 87 mS/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -225 V, -305 V, and -340 V, respectively, at 300 K.
From the experiment results, the superior performance of Al2O3 gate dielectric metal-oxide-semiconductor HEMTs (MOS-HEMT) can be effectively improve DC characteristics by USPD technique. The high-k aluminum oxide, deposited by using the ultrasonic spray pyrolysis deposition (USPD) technique, can reduce interface charges and suppress gate leakage current to improve device characteristics.
Keywords: Ultrasonic spray pyrolysis deposition, aluminum dioxide, AlGaN /GaN
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