Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film

碩士 === 崑山科技大學 === 電機工程研究所 === 106 === This work applies hydrogen plasma treatment on SnO2 films used in gas sensor to form nanoparticles. Increasing surface area of SnO2 by transferring films to particles raises sensor response sensitivity. Effects of plasma process parameters on surface of SnO2 and...

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Main Authors: Luo, Yu-Kai, 羅裕凱
Other Authors: Chang, Shang-Chou
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/7wcszv
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spelling ndltd-TW-106KSUT04420172019-08-15T03:37:46Z http://ndltd.ncl.edu.tw/handle/7wcszv Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film 氫電漿處理改善金屬氧化物半導體氣體感測膜特性 Luo, Yu-Kai 羅裕凱 碩士 崑山科技大學 電機工程研究所 106 This work applies hydrogen plasma treatment on SnO2 films used in gas sensor to form nanoparticles. Increasing surface area of SnO2 by transferring films to particles raises sensor response sensitivity. Effects of plasma process parameters on surface of SnO2 and sensor properties were studied systematically. [11][12] Results show nanoparticles are formed for SnO2 films after plasma treatment. Plasma treatment time effects the size of nanoparticles. Part of SnO2 reduces to metal Sn after plama treatment. SnO appears when the films was sputtered with SnO2 target and deposited on post plasma treated SnO2 films. The contact betwenn n type SnO2 and p type SnO increases gas sensor sensitivity. The hydrogen gas sensitivity for plasma treated SnO2 films with short period is higher than that for as-deposited SnO2 films. However, the gas sensitivity decreases if plasma treatment was too long. This could be attributed to metal Sn formation for long time hydrogen plasma treatment. The gas sensor needs semiconductor like SnO2 rather than metal like Sn.[9][12][18] Chang, Shang-Chou 張慎周 2018 學位論文 ; thesis 59 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 崑山科技大學 === 電機工程研究所 === 106 === This work applies hydrogen plasma treatment on SnO2 films used in gas sensor to form nanoparticles. Increasing surface area of SnO2 by transferring films to particles raises sensor response sensitivity. Effects of plasma process parameters on surface of SnO2 and sensor properties were studied systematically. [11][12] Results show nanoparticles are formed for SnO2 films after plasma treatment. Plasma treatment time effects the size of nanoparticles. Part of SnO2 reduces to metal Sn after plama treatment. SnO appears when the films was sputtered with SnO2 target and deposited on post plasma treated SnO2 films. The contact betwenn n type SnO2 and p type SnO increases gas sensor sensitivity. The hydrogen gas sensitivity for plasma treated SnO2 films with short period is higher than that for as-deposited SnO2 films. However, the gas sensitivity decreases if plasma treatment was too long. This could be attributed to metal Sn formation for long time hydrogen plasma treatment. The gas sensor needs semiconductor like SnO2 rather than metal like Sn.[9][12][18]
author2 Chang, Shang-Chou
author_facet Chang, Shang-Chou
Luo, Yu-Kai
羅裕凱
author Luo, Yu-Kai
羅裕凱
spellingShingle Luo, Yu-Kai
羅裕凱
Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film
author_sort Luo, Yu-Kai
title Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film
title_short Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film
title_full Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film
title_fullStr Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film
title_full_unstemmed Hydrogen Plasma Treatment Investigated Metal Oxide Semiconductor Gas Sensing Film
title_sort hydrogen plasma treatment investigated metal oxide semiconductor gas sensing film
publishDate 2018
url http://ndltd.ncl.edu.tw/handle/7wcszv
work_keys_str_mv AT luoyukai hydrogenplasmatreatmentinvestigatedmetaloxidesemiconductorgassensingfilm
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