The influence evaluation of different positive resists on the dry etching process

• Main Authors: Shih, Chuan-Yung, 石全永
• Other Authors: Ho, Tsung-Han
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/4h586g

碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系博碩士班 === 106 === The passive component products in the semiconductor industry is indispensable, and MIM (Metal-Insulator-Metal) capacitor manufacturing process is one of the most important of passive components. The MIM process includes photo process and dry etching process. In the photo process, the S type positive resist was used as the main indirect material, However, because of the market demand and cost considerations, the S-type resist was replaced by A-type as the main indirect material, due to the price of A-type is more cheaper than S-type triple. Therefore, the influence of new positive photoresist (A-type) material on the dry process evaluation was a major topic worth studying. In this study, we define the pattern by photo process and then executed dry etching process using the Inductively Coupled Plasma (ICP) technology. Finally, completed the whole process of MIM capacitor by photoresist stripping process. In this study, we try to improve the defects of the customer wafer and the electrical failure by adjusting the parameters of the photo exploring process and dry etching. Experimental results show that the yield of MIM capacitor can be effectively improved by adjusts the temperature and time of the experimental conditions. Furthermore, the MIM capacitor performance level using A-type photoresist is consistent with S-type photoresist and the A-type photoresist is successfully introduced into the original process and reached the cost reduction purposes of factory process material.