Studies of device characteristics and reliability for top gate a-IGZO TFTs by adjusting gate dielectrics process
碩士 === 明新科技大學 === 光電系統工程系碩士班 === 106 === This works prepares the top-gated thin-film transistors (TFTs) containing amorphous InGaZnO4 (a-IGZO) active channel layers with the stoichiometric ratios of 1:1:1 and 1:2:1. The a-IGZO TFTs containing single and double gate dielectric layers were also prepar...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mb624t |