Improve DRAM leakage using Theory of Inventive Problem Solving (TRIZ) method

碩士 === 明志科技大學 === 工業工程與管理系碩士班 === 106 === Buried field - effect transistor is popularly used for modern DRAM design because of its superiorities in drain-induced barrier lowering (DIBL), sub-threshold slop and junction leakage. However, gate induced drain leakage (GIDL) is enhanced by large source-d...

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Bibliographic Details
Main Authors: Lo, Kuei-Li, 羅貴利
Other Authors: WANG,CHIEN-CHIH
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/p59ttb