Improve DRAM leakage using Theory of Inventive Problem Solving (TRIZ) method
碩士 === 明志科技大學 === 工業工程與管理系碩士班 === 106 === Buried field - effect transistor is popularly used for modern DRAM design because of its superiorities in drain-induced barrier lowering (DIBL), sub-threshold slop and junction leakage. However, gate induced drain leakage (GIDL) is enhanced by large source-d...
Main Authors: | Lo, Kuei-Li, 羅貴利 |
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Other Authors: | WANG,CHIEN-CHIH |
Format: | Others |
Language: | zh-TW |
Published: |
2018
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Online Access: | http://ndltd.ncl.edu.tw/handle/p59ttb |
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