Reliability of Amorphous In-Ga-Zn-O Thin-Film Transistors under Simultaneous Illumination and Bias Stress in Different Temperature
碩士 === 國立中興大學 === 光電工程研究所 === 106 === The amorphous Indium-gallium-Zinc-Oxide (a-IGZO) thin film transistor (TFTs) has many advantages such as lower leakage current and higher electron mobility. And they can reduce device’s size as compared with the conventional amorphous silicon ones, and have a hi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
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2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67qc5v |