Investigation of N-electrode processing for AlGaN LEDs
碩士 === 國立中興大學 === 材料科學與工程學系所 === 106 === In this research, amorphous AlN thin films were prepared on the plasma-etched n-Al0.5Ga0.5N by plasma-enhanced atomic layer deposition as a plasma-damage recovery layer. Moreover, the plasma-damage recovery layer was applied for fabricating deep-ultraviolet l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24vr52 |