Improvements of P-Electrode Design and Optical Output Power in Deep-Ultraviolet AlGaN LEDs
碩士 === 國立中興大學 === 材料科學與工程學系所 === 106 === In this thesis, the Ni/Au (10/5 nm) films were grown on p+GaN layer by electron beam evaporation. The Ni/Au films were employed as a p-side electrode for the deep-ultraviolet light-emitting diodes (DUV-LEDs). Via the structural design of the p-side electrode,...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dc2hxw |