A Simulation Study for Negative Capacitance Field Effect Transistor with Novel Channel Material and Hf-based Ferroelectric Layer
碩士 === 國立中興大學 === 電機工程學系所 === 106 === When two-dimensional materials, e.g. black phosphorus and molybdenum disulfide, are used for channel materials of NC-FET, the scaling problem of CMOS device could be solved. The power consumption of transistors is divided into static power consumption and dynami...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/e978tg |