A Simulation Study for Negative Capacitance Field Effect Transistor with Novel Channel Material and Hf-based Ferroelectric Layer

• Main Authors: Yu-Yan Qiu, 邱于晏
• Other Authors: Shu-Tong Chang
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/e978tg

碩士 === 國立中興大學 === 電機工程學系所 === 106 === When two-dimensional materials, e.g. black phosphorus and molybdenum disulfide, are used for channel materials of NC-FET, the scaling problem of CMOS device could be solved. The power consumption of transistors is divided into static power consumption and dynamic power consumption. Both types of power consumption are related to operating voltage VDD. In this case, operating voltage VDD should be reduced to save the power consumption of transistors. Under room temperature, the subthreshold swing （S. S.）of the physical limit of MOSFET is about 60 mV/decade to restrict the on/off characteristics. In order to break through such physical limits, a lot of researchers proposed to use ferroelectric materials as the dielectric layer to improve the limit by stacking ferroelectric materials, which present negative capacitance effect, in series on the gate of traditional transistors. The parameters of black phosphorus and molybdenum disulfide are established in this study, and Sentaurus TCAD simulation software is used for simulating black phosphorus transistors and molybdenum disulfide transistors; in the process, single-layer and three-layer two-dimensional materials are also compared. MATLAB is further used for establishing a negative capacitance voltage calculation program for combining with Sentaurus TCAD to simulate the new ID-VGS after negative capacitance effect is added to the transistor. HfZrO2 is the ferroelectric material, and the charge continuity between different layers are taken into account in the research method. Finally, black phosphorus transistors and molybdenum disulfide transistors are compared the current on/off ratio, drain-induced barrier lowering （DIBL）, and subthreshold swing （S. S.）. In terms of current on/off ratio and subthreshold swing, black phosphorus transistors outperform molybdenum disulfide transistors. In regard to drain-induced barrier lowering, three-layer black phosphorus transistors appear better performance than single-layer black phosphorus transistor.