Development of High Density Plasma Etching Technology for Silicon Wafer Dicing
碩士 === 國立成功大學 === 化學工程學系 === 106 === In this study, plasma dicing was performed using inductively coupled plasma to generate high density plasma. The plasma dicing technology was based on Bosch process to conduct deep silicon etching. By adjusting the passivation and etching process, the dicing prof...
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| Format: | Others |
| Language: | zh-TW |
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2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6kwwyc |
| Summary: | 碩士 === 國立成功大學 === 化學工程學系 === 106 === In this study, plasma dicing was performed using inductively coupled plasma to generate high density plasma. The plasma dicing technology was based on Bosch process to conduct deep silicon etching. By adjusting the passivation and etching process, the dicing profile could be vertical with a high etching rate. The optimum dicing results achieved in the research were an etching rate of 8.03μm/min and 5.94μm/min with the linewidth of 32μm and 14.5μm. The etching profile were vertical without bowing and undercut. The testing result of etching mask resistance showed that laser saw solution and silicon dioxide had higher selectivity.
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