Fabrication of p-type/n-type Gallium Nitride Nanorods Light-Emitting Diode Devices

碩士 === 國立成功大學 === 化學工程學系 === 106 === Gallium nitride is a semiconductor material with the direct and wide band gap. This excellent photoelectric material characteristic is usually made into a light-emitting diode. This research will use the self-developed plasma-enhanced chemical vapor deposition (P...

Full description

Bibliographic Details
Main Authors: Yu-ChiHuang, 黃昱齊
Other Authors: Zhao-Nan Hong
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/6vmnez