Fabrication of p-type/n-type Gallium Nitride Nanorods Light-Emitting Diode Devices
碩士 === 國立成功大學 === 化學工程學系 === 106 === Gallium nitride is a semiconductor material with the direct and wide band gap. This excellent photoelectric material characteristic is usually made into a light-emitting diode. This research will use the self-developed plasma-enhanced chemical vapor deposition (P...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6vmnez |
| Summary: | 碩士 === 國立成功大學 === 化學工程學系 === 106 === Gallium nitride is a semiconductor material with the direct and wide band gap. This excellent photoelectric material characteristic is usually made into a light-emitting diode. This research will use the self-developed plasma-enhanced chemical vapor deposition (PECVD) system to grow the one-dimensional gallium nitride nanorods for use in a self-assembled growth mechanism. GaN nanorods with the p-n junction was fabricated into a LED devices, and its voltage-current curve was measured. The I-V curve can be observed to have rectification characteristics. When device is applied to a forward bias of 11 volt, the devices instantly produces bright light and then disappears. In order to increase the area of the bottom surface of the nanorods and reduce the current density. A p-n junction was grown on a silicon dioxide substrate and transferred to other substrates to expose a large area at the bottom of the nanorods. No electroluminescence phenomenon is found when measuring this devices after do the electrical test.
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