SiO2/ScAlN/LiNbO3 Multilayer Structure for High K2 and Low TCF SAW Devices

碩士 === 國立成功大學 === 材料科學及工程學系 === 106 === We report a high electromechanical coupling coefficient (K2) and low temperature coefficient of frequency (TCF) surface acoustic wave (SAW) device on SiO2/ScAlN/LiNbO3 structure. The ScxAl1-xN films (x=0.23, 0.24, 0.26, 0.29, 0.31, 0.34, 0.39) are deposited on...

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Bibliographic Details
Main Authors: Chun-TingShen, 申鈞婷
Other Authors: Jow-Lay Huang
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/6t68yg