Influence of the polarity of SET process on self-rectifying characteristics of tantalum oxide-based bilayer resistive switching memories
碩士 === 國立成功大學 === 材料科學及工程學系 === 106
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/nv3upe |