Multi-optical method on analyzing the structural evolution of SiGe ultrathin layer
碩士 === 國立成功大學 === 物理學系 === 106 === In order to reduce the scale of devices, the further scale down of transistors is a trend of semiconductor fabrication. It is important that fabricate ultra-shallow junction keep high fabrication quality and electrical properties with the reducing of transistors sc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9hmj4s |