Improvement of Resistive Switching Characteristics in BZT Films by Embedding a Thin Al Layer for Flexible Memory
碩士 === 國立成功大學 === 微電子工程研究所 === 106 === In this work, a barium zirconate titanate thin film was prepared as the material for the resistive memory insulating layer using a sol-gel method. As a result of using aluminum as a capping layer to assist the carrier transport of the device, the set/reset volt...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3n4498 |