Modeling and Simulation of Negative Capacitance Double-Gate FinFET via TCAD
碩士 === 國立成功大學 === 電機工程學系 === 106 === Ferroelectric (FE) material can perform negative capacitance (NC) under certain conditions. In the conventional MOSFET stack, the ferroelectric film with NC effect on the gate structure. It will be the NCFET. MOSFET devices have been limited by Boltzmann tyranny...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dwz26j |