Process Fabrication and Temperature Characterization of Schottky Barrier Silicon Nanowire Charge-Trapping Memories

博士 === 國立暨南國際大學 === 電機工程學系 === 106 === This dissertation studies process fabrication and associated characterization of Schottky barrier silicon nanowire charge-trapping memories. Three fabrication techniques were employed to form gate-all-around nanowire structures, including wet etching, sidewall...

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Bibliographic Details
Main Authors: TSAI, JR-JIE, 蔡智傑
Other Authors: SHIH, CHUN-HSING
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/2m97k3