Process Fabrication and Temperature Characterization of Schottky Barrier Silicon Nanowire Charge-Trapping Memories
博士 === 國立暨南國際大學 === 電機工程學系 === 106 === This dissertation studies process fabrication and associated characterization of Schottky barrier silicon nanowire charge-trapping memories. Three fabrication techniques were employed to form gate-all-around nanowire structures, including wet etching, sidewall...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/2m97k3 |