Study of Tri-Gate InAs HEMTs for Low-Noise Amplifier Applications
碩士 === 國立交通大學 === 光電系統研究所 === 106 === Recently, the planar transistors with sub-micro-scale gates have already been the trend of semiconductor industry. Many researches still focus on reducing gate length. However, as the transistor scales down, many problems start appearing, such as VTH roll-off an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23ttw8 |