Gate Dielectric Optimization of High Performance GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors.
碩士 === 國立交通大學 === 光電工程研究所 === 106 === Recent progress in high power field-effect transistors (FETs) was focused on GaN-based wide band-gap (WBG) semiconductors. Recent progress in high power fieldeffect transistors (FET) focused on GaN-based wide band-gap semiconductors. GaN-based high electron mobi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6x4kw9 |