Epitaxial Layer Transfer by Photoelectrical Chemical Etching (PEC)

• Main Authors: Huang, Xi-Cheng, 黃希丞
• Other Authors: Chang, Shu-Wei
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/3h3dzh

碩士 === 國立交通大學 === 光電工程研究所 === 106 === The applications of high quality laser diodes and micro-LEDs have been booming in recent years. However, the cost of epitaxial growth on bulk GaN substrates is rather high. If the epitaxial layer could be transferred to another substrate, the original GaN substrate will be potentially to recycled. Photoelectrochemical (PEC) etching is one of only few techniques applicableto etch GaN and its alloys under room temperature. At the meantime, joule heating under high current injection also limited the laser performance, therefore, a direct contact of p-contact to the heat reservoir will be preferred. In this study, we used a photoelectrochemical chemical (PEC) etching method to transfer the etched laser epitaxial layer to other substrate, forming a P-side down epitaxial layer, and then process the ridge laser from the n-side. We successfully demonstrated the electroluminescence on the transferred wpi, which confirmed a low damage during fabrication.