Flash Read Disturb Management Using Adaptive Cell Bit-Density with In-Place Reprogramming
碩士 === 國立交通大學 === 資訊科學與工程研究所 === 106 === Read disturbance is a circuit-level noise induced by flash read operations. Read refreshing employs data migration to prevent read disturbance from corrupting existing data. However, it costs frequent block erasure under read-intensive workloads. Inspired by...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8s3tjd |