Large Signal Modeling of AlGaN/GaN HEMTs and Design of 50W Power Amplifier at 3.5Ghz
碩士 === 國立交通大學 === 照明與能源光電研究所 === 106 === In this thesis, this study is composed of large-signal modeling and design of power amplifier. GaN HEMTs are suitable for high-power and high-frequency applications. We use the transistor, which is fabricated by BeMiTec (Berlin Microwave Technologies). It is...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/s6udk9 |