| Summary: | 碩士 === 國立交通大學 === 照明與能源光電研究所 === 106 === In this thesis, this study is composed of large-signal modeling and design of power amplifier. GaN HEMTs are suitable for high-power and high-frequency applications. We use the transistor, which is fabricated by BeMiTec (Berlin Microwave Technologies). It is an important device in this experiment. I also utilize the large signal model, which is supplied by FBH (Ferdinand Braun Institut) to design a 50W power amplifier at 3.5GHz.
This study uses Angelov-GaN model, which is suitable for GaN and GaAs device. We use some simulated data generated by the FBH model in order to replace measurement data. The parameters of Angelov-GaN model will be extracted by DC signal and RF signal. Finally, I simulate harmonic balance to analyze and verify Angelov-GaN model.
Design of circuit is also composed of two parts. I use FBH model to design power amplifier. I also use the measurement data, de-embed the measurement result, and design the power amplifier. Finally, I realize 34W power amplifier at 3.45GHz.
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