Epitaxial Growth and Characteristics Analysis of Aluminum Nanofilms
碩士 === 國立交通大學 === 電子研究所 === 106 === The thesis studies the growth of aluminum thin films on gallium arsenide substrate by using molecular beam epitaxy (MBE), which successfully grow large-area, continuous, and high-quality crystallinity aluminum thin films. The material characteristics, electrical p...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/368czt |