Heterophase Interface of Molybdenum Ditelluride Transistor
碩士 === 國立交通大學 === 電子研究所 === 106 === Because of lack of dangling bonds at the contact interface, transition metal dichalcogenides (TMDs) encounter a significant challenge of reducing contact resistance. Heterophase edge-contacted structures, which form chemical bonds at the lateral interface, are pro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/frqwj6 |