Study on the Source/Drain Engineering of InGaAs MOSFETs and FinFETs
碩士 === 國立交通大學 === 電子研究所 === 106 === III–V compound semiconductors have been considered as the new channel materials for the future extremely scaled complementary metal oxide semiconductor (CMOS) devices due to their expected high injection velocity and electron mobility. However, one of the key chal...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/zzspx2 |