Simulation and Analysis of the Statistical Variability of Metal Gate Granularity and Random Telegraph Signals Induced Threshold Voltage Shift in Nanoscale FinFETs
碩士 === 國立交通大學 === 電子研究所 === 106 === In current semiconductor device process, the process variability is a crucial issue. For all characteristics associated with process variation, random variation of threshold voltage is especially important. In this thesis, with the help of commercial 3D technology...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/ggw6j4 |