Fabrication,Bonding and Characterization of High Power Semiconductor Lasers Emitting at 800nm Range
碩士 === 國立交通大學 === 電子研究所 === 106 === A novel epi-structure called asymmetric cladding of single GaAs quantum well laser structure design is presented. During fabrication process, a current blocking design have been utilized in order to reduce the carrier density at the facet,which can suppress catast...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/xz7dfk |