A study of the gate engineering of the Ge MOS capacitor and n-MOSFET devices using ZrO2 as gate dielectric
碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, the MOSCAPs with the HfO2 and ZrO2 as gate dielectrics were firstly investigated. All of the electrical characteristics of the Zr-based samples imply that ZrO2 might be a promising material as the gate dielectric of Ge MOSFETs. Then, the effects of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4xv693 |