Study on Electrical and Chemical Characteristics of Indium Gallium Arsenide MOSFET and FinFET with Atomic-Layer-Deposited Al2O3 Gate Dielectrics
碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, we have studied the interface characteristic between (100)-oriented In0.53Ga0.47As channel layer and ALD-Al2O3 (atomic-layer-deposition, ALD). There are several pitfalls for extracting the interface state density (Dit) by the traditional conductanc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2n6vys |