Study of Si Interstitials Effect on Formation and Light Emitting/Detection Characteristics of Ge-QD/SiO2/SiGe Shell Heterostructure
碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, We successfully increased the amount of Si interstitials released during thermal oxidation process by replacing c-Si substrate with poly-Si layer. The cup-shaped SiGe shell in the self-organized Ge-QD/SiO2/SiGe shell heterostructure was also observ...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/kzx9ck |