A Study on Simultaneous Formation of Ohmic Contact on N-type and P-type Implanted 4H-SiC with Ti/Al/TiN
碩士 === 國立交通大學 === 電子研究所 === 106 === 4H silicon carbide (4H-SiC) is a promising wide bandgap semiconductor. It is generally applied to high power devices owing to its properties of high breakdown field, high saturation velocity, and high thermal conductivity. In 4H-SiC-based devices, it is always an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/627xw6 |