Effects of Low-temperature Forming Gas Anneal on AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors
碩士 === 國立交通大學 === 電子研究所 === 106 === Conventional a-Si TFTs possesses obviously disadvantages in transistor operation, such as high subthreshold swing (SS), low field-effect mobility, and higher turn on voltage. For the purpose of resolving above problems, we gradually develop to replace a-Si TFTs wi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/k7p7g4 |