Effects of Low-temperature Forming Gas Anneal on AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors
碩士 === 國立交通大學 === 電子研究所 === 106 === Conventional a-Si TFTs possesses obviously disadvantages in transistor operation, such as high subthreshold swing (SS), low field-effect mobility, and higher turn on voltage. For the purpose of resolving above problems, we gradually develop to replace a-Si TFTs wi...
Main Authors: | Li, Guan-Yi, 李冠毅 |
---|---|
Other Authors: | Chang, Kow-Ming |
Format: | Others |
Language: | en_US |
Published: |
2018
|
Online Access: | http://ndltd.ncl.edu.tw/handle/k7p7g4 |
Similar Items
-
The Study of AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors with Microwave Annealing Treatment
by: Chen, Hsin-Ying, et al.
Published: (2017) -
Interface Improvement Thin-Film Transistors with Amorphous Mg-InGaZnO/InGaZnO AP-PECVD Fabricated Channel Structure
by: Kuo, Jui-Lin, et al.
Published: (2019) -
Microwave Annealing as a Low Thermal Budget Technique for Amorphous InGaZnO Thin-Film Transistors Fabricated Using AP-PECVD
by: Chang, Yao-Yuan, et al.
Published: (2018) -
The Study of AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors with Oxygen Neutral Beam Plasma Treatment
by: Zheng, You-Xian, et al.
Published: (2016) -
Synchrotron Radiation Technology Study of AP-PECVD fabricated amorphous InGaZnO
by: Lin, Jo-Chun, et al.
Published: (2018)