A Study of Interfacial Layer with Incorporation of Metal Yttrium Based on the HfO2-based Gate Stack for Germanium Devices
碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, we fabricated the interfacial layers (ILs) with the incorporation of metal Yttrium (Y) in the HfO2-based (IL/HfO2/AlOx/HfO2/TiN) gate stack. First, the three different IL processes on Ge were investigated: (1) oxygen plasma oxidation (PO), (2) oxyg...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26b2f3 |