Optimization of GaN and AlN epilayer for HEMT application
碩士 === 國立交通大學 === 電子物理系所 === 106 === GaN, Al1-xGaxN, and AlN epilayers were grown by molecular beam epitaxy system (MBE). The in situ reflection high-energy electron diffraction (RHEED) measurements were used to find the best growth conditions of substrate temperature and element flux ratio. The opt...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m3an56 |