Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 106 === A high crystal quality GaN channel layer, a series of 0% to 100% AlxGa1-xN ternary alloy, and AlGaN/GaN two-dimensional electron gas (2DEG) heterostructures have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) on MOCVD-grown semi-insulating GaN temp...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79gfsv |