Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 106 === A high crystal quality GaN channel layer, a series of 0% to 100% AlxGa1-xN ternary alloy, and AlGaN/GaN two-dimensional electron gas (2DEG) heterostructures have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) on MOCVD-grown semi-insulating GaN temp...
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ndltd-TW-106NCTU54290412019-09-26T03:28:11Z http://ndltd.ncl.edu.tw/handle/79gfsv Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy 分子束磊晶成長之氮化鋁鎵薄膜及氮化鋁鎵/氮化鎵二維電子氣異質結構之特性研究 Chang, Yu-Wei 張祐維 碩士 國立交通大學 電子物理系所 106 A high crystal quality GaN channel layer, a series of 0% to 100% AlxGa1-xN ternary alloy, and AlGaN/GaN two-dimensional electron gas (2DEG) heterostructures have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) on MOCVD-grown semi-insulating GaN templates. A wide range of measurements were conducted on the GaN channel layer samples, AlxGa1-xN samples, and 2DEG samples to study the interplay between their characteristics. A high sheet carrier concentration of 1.42×1013 cm-2 and a low sheet resistance of 599 Ω / sq were achieved by performing different treatments at the AlGaN/GaN heterointerface. However, the mobility of the 2DEG was rather low and the values were scattered from sample to sample, presumably due to the unoptimized GaN surface morphology and Al content fluctuation in the AlGaN barrier layer. Chou, Wu-Ching 周武清 2018 學位論文 ; thesis 64 en_US |
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碩士 === 國立交通大學 === 電子物理系所 === 106 === A high crystal quality GaN channel layer, a series of 0% to 100% AlxGa1-xN ternary alloy, and AlGaN/GaN two-dimensional electron gas (2DEG) heterostructures have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) on MOCVD-grown semi-insulating GaN templates. A wide range of measurements were conducted on the GaN channel layer samples, AlxGa1-xN samples, and 2DEG samples to study the interplay between their characteristics. A high sheet carrier concentration of 1.42×1013 cm-2 and a low sheet resistance of 599 Ω / sq were achieved by performing different treatments at the AlGaN/GaN heterointerface. However, the mobility of the 2DEG was rather low and the values were scattered from sample to sample, presumably due to the unoptimized GaN surface morphology and Al content fluctuation in the AlGaN barrier layer.
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author2 |
Chou, Wu-Ching |
author_facet |
Chou, Wu-Ching Chang, Yu-Wei 張祐維 |
author |
Chang, Yu-Wei 張祐維 |
spellingShingle |
Chang, Yu-Wei 張祐維 Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy |
author_sort |
Chang, Yu-Wei |
title |
Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy |
title_short |
Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy |
title_full |
Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy |
title_fullStr |
Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy |
title_full_unstemmed |
Characterization of AlxGa1-xN Epilayers and AlGaN/GaN 2DEG Heterostructures Grown by Molecular Beam Epitaxy |
title_sort |
characterization of alxga1-xn epilayers and algan/gan 2deg heterostructures grown by molecular beam epitaxy |
publishDate |
2018 |
url |
http://ndltd.ncl.edu.tw/handle/79gfsv |
work_keys_str_mv |
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