Gallium Nitride Nanowires Growth using Nanosphere Lithography
碩士 === 國立交通大學 === 電子物理系所 === 106 === The benefits for nanowire device applications are based on quantum confinement effect and larger surface. The important requirement of that is the precise control of GaN nanowires with well uniformity. In addition, investigating the key factor to determine the gr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/df3m6e |