A Study of Ion Implanter Implanting Angle Calibration

• Main Authors: Lin, Larry Shih-hao, 林詩豪
• Other Authors: Chang, Yi
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/j32eb5

碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 106 === With the advanced development of semiconductor manufacturing technology in recent decades, various kinds of electronic devices truly changed human’s life. The critical dimension also has reduced to nanometer scale. The ion implantation plays an important role in present device fabrication, compared with traditional furnace thermal process. For the low thermal budget, an-isotropic and dopant-depth-controlled process, the control of implant angle of ion implanter is an extremely important topic especially for the 3D-FinFET generation. The main task of this thesis is to explore the angle control and calibration technic of an ion implanter, in order to identify the key parameters of the ion beam. The key factors which affect the implanter performance, such as the dopant species, ion beam energy and implant angle, were calculated by the thermal wave metrology method. It provides the fast response, low cost and reliable method to monitor the tool performance. Also, a secondary ion mass spectrometry (SIMS) were performed to re-confirm the dopant profile by depth of implanting which ensures data quality and tool stability.   Base on the experimental data, the ion beam energy & ion beam species play the important role of profile deviation; while the incident angle got no linear distribution in the experiment. The same behavior is also reflected the signal to noise ratio in Taguchi method.