Using HfAlO Ferroelectrics with Strained-gate to Realize the Negative Capacitance FETs for Ultra-low Power Applications
碩士 === 國立交通大學 === 影像與生醫光電研究所 === 106 === In this thesis, we demonstrated ferroelectric HfAlO thin film in MOSFET. Low operation voltage with low subthreshold swing can be achieved by the negative capacitance effect. In addition, the NCFET also reduces the power consumption. The characteristics of fe...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/upd83y |