Study of formation of boron-rich layers using boron spin-on-dopant diffusion process and its impact on bifacial silicon solar cells
碩士 === 國立中央大學 === 材料科學與工程研究所 === 106 === Most current B diffusion processes used to fabricate n-type solar cell result in the formation of BRL which is located between the borosilicate glass (BSG) and emitter region. The formation of BRL is effective at gettering, but it’s harmful to silicon solar c...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/j722vg |