Numerical analysis of carbon concentration in GaN films growth via MOCVD in horizontal reactor
碩士 === 國立中央大學 === 能源工程研究所 === 106 === In recent years, GaN film materials are regarded as one of important future semiconductor materials because of their high temperature resistance, high voltage resistance and low resistance. Gallium nitride is produced by metal organic chemical vapor deposition (...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/txrjz4 |